BSP254A,126 NXP Semiconductors, BSP254A,126 Datasheet

MOSFET P-CH 250V 200MA SOT54

BSP254A,126

Manufacturer Part Number
BSP254A,126
Description
MOSFET P-CH 250V 200MA SOT54
Manufacturer
NXP Semiconductors
Datasheet
1.BSP254A126.pdf (12 pages)

Specifications of BSP254A,126

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
2.8V @ 1mA
Input Capacitance (ciss) @ Vds
90pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
933981790126
BSP254A AMO
BSP254A AMO
Product specification
File under Discrete Semiconductors, SC13b
DATA SHEET
BSP254; BSP254A
P-channel enhancement mode
vertical D-MOS transistor
DISCRETE SEMICONDUCTORS
April 1995

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BSP254A,126 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BSP254; BSP254A P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 ...

Page 2

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in ...

Page 3

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GSO I drain current D I drain current DM P total power ...

Page 4

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GS(th) R drain-source ...

Page 5

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 1 handbook, halfpage (A) 0.8 0.6 0.4 0 Fig.5 Typical output characteristics handbook, halfpage ...

Page 6

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 2.5 handbook, halfpage k 2 1 Fig ----------------------------------------------- - typical R at 200 mA/ 10 ...

Page 7

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINES Plastic single-ended leaded (through hole) package; 3 leads (on-circle DIMENSIONS (mm are the original dimensions) UNIT 5.2 ...

Page 8

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product ...

Page 9

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor April 1995 NOTES 9 Product specification BSP254; BSP254A ...

Page 10

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor April 1995 NOTES 10 Product specification BSP254; BSP254A ...

Page 11

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor April 1995 NOTES 11 Product specification BSP254; BSP254A ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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