BUK9608-55,118 NXP Semiconductors, BUK9608-55,118 Datasheet - Page 5

• Manufacturer Part Number: BUK9608-55,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9608-55,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 6900pF @ 25V
• Power - Max: 187W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934045270118; BUK9608-55 /T3; BUK9608-55 /T3

Philips Semiconductors
April 1998
TrenchMOS
Logic level FET
Fig.13. Typical turn-on gate-charge characteristics.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-05
VGS/V
V
12
10
8
6
4
2
0
0.01
GS
Fig.12. Typical capacitances, C
I
C = f(V
D
6
5
4
3
2
1
0
0
= f(Q
0
= f(V
Fig.11. Sub-threshold drain current.
10
G
GS)
DS
); conditions: I
0.5
); conditions: V
; conditions: T
0.1
20
2%
transistor
30
1
40
typ
1
D
1.5
VDS/V
= 50 A; parameter V
j
GS
= 25 ˚C; V
QG/nC
50
VDS = 14V
Sub-Threshold Conduction
= 0 V; f = 1 MHz
98%
60
2
10
iss
, C
DS
70
oss
= V
2.5
VDS = 44V
, C
80
GS
rss
100
Ciss
Coss
Crss
.
DS
90
3
5
VGS
0
IF/A
I
Fig.15. Normalised avalanche energy rating.
100
F
80
60
40
20
120
110
100
0
= f(V
90
80
70
60
50
40
30
20
10
0
0
Fig.14. Typical reverse diode current.
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
SDS
DSS
DSS
40
0.2
); conditions: V
% = f(T
RGS
0.5 LI
60
0.4
mb
80
); conditions: I
D
2
Tj/C =
BV
Tmb / C
VSDS/V
0.6
100
GS
DSS
L
175
= 0 V; parameter T
VDS
120
BV
T.U.T.
Product specification
0.8
DSS
BUK9608-55
140
D
shunt
= 75 A
R 01
V
25
DD
1
160
-
+
Rev 1.000
-ID/100
180
VDD
1.2
j