PSMN005-25D,118 NXP Semiconductors, PSMN005-25D,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN005-25D,118
• Description: MOSFET N-CH 25V 75A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-25D,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 3500pF @ 20V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055816118; PSMN005-25D /T3; PSMN005-25D /T3

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics.
15
14
13
12
11
10
50
45
40
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
5
0
I
F
0
0
Gate-source voltage, VGS (V)
Source-Drain Diode Current, IF (A)
= f(V
ID = 75 A
VDD = 15 V
Tj = 25 C
VGS = 0 V
Fig.14. Typical reverse diode current.
0.1
10
SDS
0.2
20
); conditions: V
0.3
30
Source-Drain Voltage, VSDS (V)
0.4
Gate charge, QG (nC)
40
V
175 C
GS
0.5
50
= f(Q
0.6
GS
60
G
0.7
= 0 V; parameter T
)
70
0.8
Tj = 25 C
80
0.9
90
1
100
1.1
110
1.2
j
(TM)
7
transistor
avalanche current (I
100
10
1
0.001
Fig.15. Maximum permissible non-repetitive
Maximum Avalanche Current, I
unclamped inductive load
0.01
Tj prior to avalanche = 150 C
Avalanche time, t
AS
) versus avalanche time (t
0.1
AS
(A)
PSMN005-25D
AV
(ms)
Product specification
1
25 C
Rev 1.100
10
AV
);