PSMN005-30K NXP Semiconductors, PSMN005-30K Datasheet
PSMN005-30K
Specifications of PSMN005-30K
Available stocks
Related parts for PSMN005-30K
PSMN005-30K Summary of contents
Page 1
... PSMN005-30K N-channel TrenchMOS SiliconMAX logic level FET Rev. 01 — 17 November 2009 1. Product profile 1.1 General description SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
Page 2
... Conditions ≥ 25 °C; T ≤ 150 ° ° see Figure ≤ 10 µs; pulsed; see °C; t Figure °C; see Figure °C sp ≤ 10 µs; pulsed ° Rev. 01 — 17 November 2009 PSMN005-30K Graphic symbol mbb076 4 Version SOT96-1 Min Max Unit - 3.5 W -55 150 °C ...
Page 3
... N-channel TrenchMOS SiliconMAX logic level FET 03aa25 120 P der (%) 150 200 0 T (°C) sp Fig 2. Normalized total power dissipation as a function of solder point temperature = Rev. 01 — 17 November 2009 PSMN005-30K 03aa17 50 100 150 T (°C) sp 03ah05 = 10 μ 100 μ 100 (V) DS © NXP B.V. 2009. All rights reserved. 200 ...
Page 4
... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN005-30K_1 Product data sheet N-channel TrenchMOS SiliconMAX logic level FET Conditions mounted on a metal clad board; see Figure 4 single pulse −3 −2 − Rev. 01 — 17 November 2009 PSMN005-30K Min Typ Max Unit - - 20 K/W 03ah04 t p δ ...
Page 5
... Figure 10 and 4 °C; see Figure MHz °C; see Figure Ω Ω °C G(ext ° ° see Figure /dt = -100 A/µ ° Rev. 01 — 17 November 2009 PSMN005-30K Min Typ Max Unit 0 3 µ 0 100 100 nA - 6.6 8 mΩ - 4.4 5.5 mΩ 3100 - pF - 605 - ...
Page 6
... Transfer characteristics: drain current as a function of gate-source voltage; typical values 1 03ah18 iss - oss - rss - (V) Fig 8. Sub-threshold drain current as a function of gate-source voltage Rev. 01 — 17 November 2009 PSMN005-30K 03ah08 × > DSon = 150 °C 25 ° 03af66 typ max min © NXP B.V. 2009. All rights reserved. ...
Page 7
... T (°C) j Fig 10. Drain-source on-state resistance as a function of drain current; typical values 03af18 ( 120 180 T (°C) j Fig 12. Gate-source voltage as a function of gate charge; typical values Rev. 01 — 17 November 2009 PSMN005-30K 03ah07 = 25 ° 3 4 (A) D 03ah11 ° ...
Page 8
... N-channel TrenchMOS SiliconMAX logic level FET 03ah10 (A) C iss 40 C oss 20 C rss (V) DS Fig 14. Source current as a function of source-drain voltage; typical values Rev. 01 — 17 November 2009 PSMN005-30K 03ah09 150 °C 25 ° 0.4 0.8 V (V) SD © NXP B.V. 2009. All rights reserved. 1 ...
Page 9
... 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.019 0.0100 0.20 0.16 0.244 0.05 0.041 0.014 0.0075 0.19 0.15 0.228 REFERENCES JEDEC JEITA MS-012 Rev. 01 — 17 November 2009 PSMN005-30K θ detail 1.0 0.7 1.05 0.25 0.25 0.1 0.4 ...
Page 10
... Revision history Table 7. Revision history Document ID Release date PSMN005-30K_1 20091117 PSMN005-30K_1 Product data sheet N-channel TrenchMOS SiliconMAX logic level FET Data sheet status Change notice Product data sheet - Rev. 01 — 17 November 2009 PSMN005-30K Supersedes - © NXP B.V. 2009. All rights reserved ...
Page 11
... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 17 November 2009 PSMN005-30K © NXP B.V. 2009. All rights reserved ...
Page 12
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 November 2009 Document identifier: PSMN005-30K_1 All rights reserved. ...