PSMN005-55P,127 NXP Semiconductors, PSMN005-55P,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN005-55P,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-55P,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 103nC @ 5V
• Input Capacitance (ciss) @ Vds: 6500pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055638127; PSMN005-55P; PSMN005-55P

Philips Semiconductors
October 1999
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
SYMBOL PARAMETER
I
I
V
t
Q
j
N-channel logic level TrenchMOS
S
SM
rr
= 25˚C unless otherwise specified
SD
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
I
I
I
V
F
F
F
GS
= 25 A; V
= 75 A; V
= 20 A; -dI
= 0 V; V
(TM)
GS
GS
R
F
/dt = 100 A/ s;
= 30 V
= 0 V
= 0 V
4
transistor
MIN. TYP. MAX. UNIT
-
-
-
-
-
-
PSMN005-55B;
PSMN005-55P
0.85
1.1
0.2
Product specification
80
-
-
240
1.2
75
-
-
-
Rev 1.200
ns
A
A
V
V
C