BUK7624-55A,118 NXP Semiconductors, BUK7624-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK7624-55A,118
• Description: MOSFET N-CH 55V 47A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7624-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1310pF @ 25V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934056286118; BUK7624-55A /T3; BUK7624-55A /T3

Philips Semiconductors
9397 750 08029
Product specification
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
GS
DS
function of gate-source voltage; typical values.
= 25 V
= 0 V
I D
(A)
80
60
40
20
0
0
2
4
T j = 25
6
O
C
T j = 175
8
V GS (V)
I S
03nb69
(A)
120
100
80
60
40
20
O
0
C
10
0.0
Rev. 02 — 01 March 2001
BUK7524-55A; BUK7624-55A
0.5
Fig 14. Gate-source voltage as a function of turn-on
T j = 175
T
j
= 25 C; I
V GS
(V)
gate charge; typical values.
O
C
10
8
6
4
2
0
1.0
0
T j = 25
D
V SD (V)
= 25 A
O
C
03nb66
V DD = 14 V
10
TrenchMOS™ standard level FET
1.5
20
© Philips Electronics N.V. 2001. All rights reserved.
V DD = 44 V
30
Q G (nC)
03nb67
40
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