BUK7628-55A,118 NXP Semiconductors, BUK7628-55A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7628-55A,118
• Description: MOSFET N-CH 55V 42A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7628-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1165pF @ 25V
• Power - Max: 99W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 99 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056268118; BUK7628-55A /T3; BUK7628-55A /T3

Philips Semiconductors
June 2000
TrenchMOS
Standard level FET
100
70
65
60
55
50
45
40
35
30
25
20
55
50
45
40
35
30
25
20
15
10
Fig.5. Typical output characteristics, T
90
80
70
60
50
40
30
20
10
Fig.6. Typical on-state resistance, T
Fig.7. Typical on-state resistance, T
0
0
6
RDS(ON) / mOhm
RDS(ON) / mOhm
0
ID / A
VGS / V =
18.0
16.0
12.0
11.5
R
10
DS(ON)
8
R
I
DS(ON)
2
20
D
= f(V
6.0
= f(V
10
30
= f(I
transistor
GS
DS
10.5
10.0
11.0
6.5
); conditions I
); parameter V
4
D
12
40
); parameter V
VGS / V
VDS / V
ID / A
7.0
50
14
6
VGS / V =
60
D
8.0
16
GS
= 25 A;
GS
70
j
j
8
j
= 25 ˚C.
= 25 ˚C.
= 25 ˚C.
18
9.0
5.0
80
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
4.5
10
90
20
4
Fig.10. Normalised drain-source on-state resistance.
16
14
12
10
100
I
a = R
90
80
70
60
50
40
30
20
10
8
6
4
2
0
D
0
2.5
1.5
0.5
Fig.9. Typical transconductance, T
0
= f(V
gfs / S
-100
0
2
1
ID / A
Rds(on) normlised to 25degC
Fig.8. Typical transfer characteristics.
DS(ON)
GS
10
g
) ; conditions: V
fs
-50
2
/R
= f(I
Tj / ˚C =
DS(ON)25 ˚C
20
D
); conditions: V
0
4
30
Tmb / degC
= f(T
175
ID / A
25
VGS/V
50
40
DS
6
j
); I
= 25 V; parameter T
D
50
100
= 25 A; V
DS
Product specification
BUK7528-55A
BUK7628-55A
8
= 25 V
60
150
j
= 25 ˚C.
10
GS
70
Rev 1.100
= 5 V
200
12
80
j