PHX9NQ20T,127 NXP Semiconductors, PHX9NQ20T,127 Datasheet - Page 3

• Manufacturer Part Number: PHX9NQ20T,127
• Description: MOSFET N-CH 200V 5.2A TO220F
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHX9NQ20T,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 959pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055769127; PHX9NQ20T; PHX9NQ20T

Philips Semiconductors
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
November 2000
N-channel TrenchMOS
SYMBOL PARAMETER
I
I
V
t
Q
j
hs
SYMBOL
V
V
C
S
SM
rr
= 25˚C unless otherwise specified
SD
isol
isol
rr
isol
= 25 ˚C unless otherwise specified
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
PARAMETER
R.M.S. isolation voltage from all SOT186A package; f = 50-60 Hz;
three terminals to external
heatsink
Repetitive peak voltage from all
three terminals to external
heatsink
Capacitance from pin 2 to
external heatsink
transistor
CONDITIONS
I
I
V
F
F
GS
= 9 A; V
= 9 A; -dI
= -10 V; V
CONDITIONS
sinusoidal waveform; R.H.
clean and dustfree
SOT186 package; R.H.
clean and dustfree
f = 1 MHz
GS
F
/dt = 100 A/ s;
= 0 V
R
3
= 25 V
65%;
PHX9NQ20T , PHF9NQ20T
65%;
MIN.
-
-
-
MIN.
-
-
-
-
-
TYP.
10
TYP. MAX. UNIT
0.85
Product specification
0.5
92
-
-
MAX.
2500
1500
-
8.7
1.2
35
-
-
Rev 1.100
UNIT
pF
ns
V
V
A
A
V
C