2N7002T,215 NXP Semiconductors, 2N7002T,215 Datasheet

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2N7002T,215

Manufacturer Part Number
2N7002T,215
Description
MOSFET N-CH 60V 300MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.2N7002T215.pdf (12 pages)

Specifications of 2N7002T,215

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
2.5V @ 1mA
Input Capacitance (ciss) @ Vds
40pF @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
2N7002T T/R
2N7002T T/R
934055796215
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Pinning
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Description
gate (G)
source (S)
drain (D)
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
2N7002T
N-channel TrenchMOS FET
Rev. 01 — 17 November 2005
Logic level threshold compatible
Surface-mounted package
Logic level translator
V
R
DS
DSon
60 V
5
Simplified outline
1
SOT23
Very fast switching
TrenchMOS technology
High-speed line driver
I
P
D
tot
3
300 mA
0.83 W
2
Product data sheet
Symbol
mbb076
G
D
S

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2N7002T,215 Summary of contents

Page 1

N-channel TrenchMOS FET Rev. 01 — 17 November 2005 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Surface-mounted package 1.3 Applications Logic ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name 2N7002T TO-236AB 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ------------------------ 100 % der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...

Page 4

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) R thermal resistance from junction to ambient th(j-a) Mounted on a printed-circuit board; minimum footprint; vertical in still air [1] ...

Page 5

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage GS(th) I drain leakage current DSS I gate leakage current GSS R ...

Page 6

Philips Semiconductors 0 (A) 0.6 0.4 0 0.4 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 0 ...

Page 7

Philips Semiconductors 3 V max GS(th) (V) typ 2 min Fig 9. Gate-source threshold voltage as a function of junction temperature 0 (S) ...

Page 8

Philips Semiconductors and 150 Fig 13. Source current as a function of source-drain voltage; typical values 2N7002T_1 Product data sheet (A) 0.8 0.6 0.4 ...

Page 9

Philips Semiconductors 7. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig ...

Page 10

Philips Semiconductors 8. Revision history Table 6: Revision history Document ID Release date 2N7002T_1 20051117 2N7002T_1 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 17 November 2005 2N7002T N-channel TrenchMOS FET Doc. number ...

Page 11

Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 12

Philips Semiconductors 14. Contents 1 Product profi 1.1 General description ...

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