IRF520N International Rectifier, IRF520N Datasheet - Page 5

• Manufacturer Part Number: IRF520N
• Description: MOSFET N-CH 100V 9.7A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF520N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF520N

10.0
0.01
8.0
6.0
4.0
2.0
0.0
0.1
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
T , Case Temperature ( C)
C
Case Temperature
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
150
t , Rectangular Pulse Duration (sec)
1
175
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
G
t
d(on)
10V
1. Duty factor D = t / t
2. Peak T = P
V
Notes:
GS
V
t
r
DS
J
µs
0.01
DM
x Z
1
D.U.T.
thJC
IRF520N
P
2
DM
R
t
d(off)
+ T
D
C
t
1
t
f
t
2
+
-
V
DD
0.1