IRF520N International Rectifier, IRF520N Datasheet - Page 7

• Manufacturer Part Number: IRF520N
• Description: MOSFET N-CH 100V 9.7A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF520N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF520N

Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
= 5V for Logic Level Devices
P.W.
SD
DS
Fig 14. For N-Channel HEXFETS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Low Stray Inductance
Ground Plane
Current Transformer
Low Leakage Inductance
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
IRF520N
DD
*