IRL520NS International Rectifier, IRL520NS Datasheet - Page 2

• Manufacturer Part Number: IRL520NS
• Description: MOSFET N-CH 100V 10A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL520NS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL520NS

Electrical Characteristics @ T
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
IRL520NS/L
Source-Drain Ratings and Characteristics
Notes:
I
I
I
V
t
Q
t
V
R
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
L
DSS
S
GSS
on
d(on)
d(off)
f
SM
rr
r
For recommended footprint and soldering techniques refer to application note #AN-994.
V
fs
S
(BR)DSS
DS(on)
GS(th)
oss
SD
g
gs
gd
iss
rss
rr
max. junction temperature. ( See fig. 11 )
Repetitive rating; pulse width limited by
V
T
R
I
(BR)DSS
SD
J
DD
G
= 25 , I
= 25V, starting T
175°C
6.0A, di/dt
/ T
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Source Inductance
AS
= 6.0A. (See Figure 12)
340A/µs, V
J
= 25°C, L = 4.7mH
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
3.1
–––
–––
–––
–––
–––
Pulse width
Uses IRL520N data and test conditions
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.11 –––
–––
–––
–––
–––
110
410
–––
––– 0.18
––– 0.22
––– 0.26
–––
–––
–––
–––
––– -100
–––
–––
–––
440
7.5
4.0
35
23
22
97
50
100
–––
160
620
–––
–––
250
–––
–––
–––
–––
–––
–––
–––
1.3
2.0
4.6
35
25
20
10
10
300µs; duty cycle
V/°C
nC
nA
nC
ns
nH
pF
A
ns
V
V
V
A
S
V
V
R
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
I
R
Between lead,
and center of die contact
V
integral reverse
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 6.0A
= 6.0A
= 25°C, I
= 25°C, I
= 8.2
= 11
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= V
= 25V, I
= 100V, V
= 80V, V
= 80V
= 5.0V, See Fig. 6 and 13
= 25V
= 16V
= -16V
= 50V
= 0V
GS
2%.
, I
V
D
See Fig. 10
S
F
GS
D
D
D
= 6.0A
D
D
= 250µA
GS
= 6.0A, V
Conditions
Conditions
= 250µA
= 6.0A
= 6.0A
GS
= 6.0A
= 5.0A
= 5.0V
= 0V, T
= 0V
D
= 1mA
GS
J
= 150°C
G
= 0V
S
+L
D
S
D
)