IRL520NS International Rectifier, IRL520NS Datasheet - Page 6

• Manufacturer Part Number: IRL520NS
• Description: MOSFET N-CH 100V 10A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL520NS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL520NS

IRL520NS/L
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
10 V
Fig 13a. Basic Gate Charge Waveform
V
G
V
I
AS
DS
Q
GS
10 V
R
G
V
t
DS
p
Q
Charge
Q
GD
G
t
p
I
D.U.T.
AS
L
0.01
V
(BR)DSS
+
V
-
V
DD
DD
2 0 0
1 6 0
1 2 0
8 0
4 0
0
2 5
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
S tarting T , J unc tion T em perature (°C )
12V
V
5 0
GS
Same Type as D.U.T.
Current Regulator
J
.2 F
7 5
Vs. Drain Current
50K
3mA
Current Sampling Resistors
1 0 0
.3 F
I
G
1 2 5
T O P
B O T TO M
D.U.T.
I
D
1 5 0
4.2A
6 .0 A
2.4 A
I
+
-
D
V
DS
1 7 5
A