SI4435DY International Rectifier, SI4435DY Datasheet - Page 2

• Manufacturer Part Number: SI4435DY
• Description: MOSFET P-CH 30V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4435DY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2320pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *SI4435DY

Source-Drain Ratings and Characteristics
Si4435DY
Electrical Characteristics @ T

‚
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Notes:
R
I
SM
d(on)
d(off)
S
rr
I
r
f
DSS
V
fs
GSS
SD
2
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Pulse width
Repetitive rating; pulse width limited by
max. junction temperature.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
ƒ
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
––– -0.019 –––
––– 0.015 0.020
––– 0.026 0.035
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2320 –––
–––
–––
–––
–––
–––
-30
Surface mounted on FR-4 board, t
–––
–––
–––
–––
––– -100
–––
130
390
270
–––
–––
–––
7.1
8.0
34
33
11
40
16
76
90
–––
100
-1.2
–––
–––
–––
–––
110
200
140
–––
–––
-10
-10
-2.5
50
60
24
-50
51
V/°C
µA
nA
nC
nC
ns
pF
ns
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
I
R
V
V
p-n junction diode.
di/dt = -100A/µs ‚
V
V
V
R
ƒ = 1.0kHz
MOSFET symbol
showing the
integral reverse
T
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -4.6A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= 15
= V
= -15V, I
= -24V, V
= -15V, V
= -15V
= -15V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V ‚
= -15V, V
= 0V
GS
Conditions
, I
D
S
F
5sec.
D
Conditions
= -250µA
D
D
= -2.5A, V
= -2.5A
D
GS
GS
= -250µA
GS
= -8.0A
= -8.0A ‚
= -5.0A ‚
= 0V
= 0V, T
= -10V ‚
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V ‚
S
D