SI4435DY International Rectifier, SI4435DY Datasheet - Page 7

• Manufacturer Part Number: SI4435DY
• Description: MOSFET P-CH 30V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4435DY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2320pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *SI4435DY

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SO-8 Package Details
SO-8 Part Marking
N O T E S :
5
- C -
- A -
5
6
2. CONTROLLING DIMENSION : INCH.
1 . D I M E N S I O N I N G A N D T O L E R A N C I N G P E R A N S I Y 1 4 . 5 M - 1 9 8 2 .
3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S ( I N C H E S ) .
4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .
E
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
D I M E N S I O N S I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O A S U B S T R A T E . .
D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S
6 X
0.25 (.010)
e
8
1
B 8 X
7
2
- B -
D
6
3
5
M C A S B S
5
4
e 1
A 1
A
0.25 (.010)
H
0.10 (.004)
M
A M
8 X
L
K x 45°
6
8 X
C
1.27 ( .050 )
D I M
6.46 ( .255 )
A
A1
B
C
D
E
e
e1
H
K
L
R E C O M M E N D E D F O O T P R I N T
3X
0.16
.0040
.014
.150
.011
MIN
.0532
.0075
.189
.2284
.025 BASIC
.050 BASIC
0°
INCHES
Si4435DY
MAX
.0098
.0688
.018
.196
.157
.019
0.72 (.028 )
.0098
.2440
.050
8°
8 X
MILLIMETERS
1.35
0.10
0.36
3.81
0.28
MIN
0.19
4.80
0.635 BASIC
0.41
1.78 (.070)
5.80
1.27 BASIC
0°
8X
MAX
1.27
1.75
0.46
0.48
0.25
4.98
3.99
0.25
6.20
8°
7