IRF7601TR International Rectifier, IRF7601TR Datasheet - Page 4

• Manufacturer Part Number: IRF7601TR
• Description: MOSFET N-CH 20V 5.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7601TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 15V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7601TR; IRF7601; IRF7601CT

IRF7601
1200
1000
1 0 0
800
600
400
200
0 . 1
1 0
1
0
Fig 7. Typical Source-Drain Diode
0 . 4
1
T = 1 50 °C
J
Fig 5. Typical Capacitance Vs.
C
C
C
V
V
is s
o s s
rs s
S D
D S
0 . 8
Drain-to-Source Voltage
Forward Voltage
V
C
C
C
, Source-to-D rain V oltage (V )
, D rain-to-S ource Voltage (V )
T = 25° C
G S
iss
rs s
os s
J
= 0V ,
= C
= C
= C
1 . 2
gs
g d
ds
+ C
+ C
10
gd
gd
f = 1 MH z
1 . 6
, C
ds
SH O R TED
2 . 0
V
G S
= 0 V
100
2 . 4
A
A
100
10
10
8
6
4
2
0
1
Fig 6. Typical Gate Charge Vs.
0.1
Fig 8. Maximum Safe Operating Area
0
T
T
S ing le Pulse
I
V
D
D S
A
J
= 3.8 A
Gate-to-Source Voltage
= 25 °C
= 15 0°C
= 16 V
OPE R ATIO N IN TH IS A RE A LIMITE D
V
4
D S
Q , Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
8
1
BY R
12
D S(o n)
FO R TEST C IR C U IT
SEE F IGU R E 9
16
10
10 0µ s
10 ms
1m s
20
100
24
A
A