IRF7604TR International Rectifier, IRF7604TR Datasheet
IRF7604TR
Specifications of IRF7604TR
IRF7604
IRF7604CT
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IRF7604TR Summary of contents
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... Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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IRF7604 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2. BOTTOM - 1.5V 1 0.1 -1 .5V 20µ 25°C ...
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IRF7604 1200 iss rss gd 1000 oss 800 C ...
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Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. -3mA Current Sampling ...
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IRF7604 D.U Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** Peak Diode Recovery dv/dt ...
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Package Outline Micro8 Outline Dimensions are shown in millimeters (inches 0 ...
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IRF7604 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches ...