IRF7604TR International Rectifier, IRF7604TR Datasheet - Page 2

• Manufacturer Part Number: IRF7604TR
• Description: MOSFET P-CH 20V 3.6A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7604TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 590pF @ 15V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7604TR; IRF7604; IRF7604CT

IRF7604
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
V
R
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
I
S
GSS
d(on)
d(off)
f
DSS
r
SM
rr
V
fs
(BR)DSS
DS(ON)
GS(th)
oss
g
gs
gd
iss
rss
SD
rr
Repetitive rating; pulse width limited by
(BR)DSS
I
T
max. junction temperature. ( See fig. 11 )
SD
J
150°C
-2.4A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Leakage Current
Gate-to-Source Reverse Leakage
-96A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
-0.70 –––
Pulse width
Min. Typ. Max. Units
Min. Typ. Max. Units
Surface mounted on FR-4 board, t
–––
––– -0.022 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-20
2.6
–––
–––
––– 0.090
––– 0.13
–––
–––
–––
––– -100
–––
590
330
170
–––
–––
2.6
5.6
13
17
53
31
38
41
38
-1.0
-1.2
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
-1.8
-19
-25
3.9
9.0
300µs; duty cycle
20
62
57
V/°C
nC
nC
µA
nA
ns
pF
ns
V
V
V
S
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -2.4A
= -2.4A
= 25°C, I
= 25°C, I
= 6.0
= 4.0
= 0V, I
= V
= -10V, I
= -16V, V
= -16V, V
= -4.5V, See Fig. 6 and 9
= -4.5V, I
= -2.7V, I
= -12V
= 12V
= -16V
= 0V
= -15V
= -10V
2%.
GS
, I
10sec.
D
See Fig. 10
F
S
D
= -250µA
= -2.4A
D
= -2.4A, V
Conditions
D
D
GS
= -250µA
GS
= -1.2A
= -2.4A
= -1.2A
= 0V, T
= 0V
Conditions
D
= -1mA
GS
J
= 125°C
= 0V
G
D
S