IRLML2502TR International Rectifier, IRLML2502TR Datasheet - Page 4

• Manufacturer Part Number: IRLML2502TR
• Description: MOSFET N-CH 20V 4.2A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML2502TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 740pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLML2502TR; IRLML2502; IRLML2502; IRLML2502CT

4
100
0.1
10
1200
1000
1
800
600
400
200
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
J
Drain-to-Source Voltage
V
SD
0.6
V
DS
°
,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.8
=
=
=
=
C oss
C iss
C rss
T = 25 C
0V,
C
C
C
J
gs
gd
ds
+ C
+ C
10
°
1.0
f = 1MHz
gd ,
gd
C
ds
V
1.2
GS
SHORTED
= 0 V
1.4
100
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
10
1
8
6
4
2
0
0.1
0
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
I =
D
A
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
4.0A
V
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
4
1
BY R
V
DS
DS(on)
8
= 10V
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10
12
10us
100us
1ms
10ms
100
16