IRLML2502TR International Rectifier, IRLML2502TR Datasheet - Page 5

• Manufacturer Part Number: IRLML2502TR
• Description: MOSFET N-CH 20V 4.2A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML2502TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 740pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLML2502TR; IRLML2502; IRLML2502; IRLML2502CT

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1000
100
0.1
10
0.00001
1
D = 0.50
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
4.0
3.0
2.0
1.0
0.0
Fig 9. Maximum Drain Current Vs.
25
0.001
t , Rectangular Pulse Duration (sec)
Case Temperature
50
1
T , Case Temperature ( C)
C
75
0.01
100
125
°
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
150
J
DM
x Z
1
thJA
P
2
1
DM
+ T
A
t
1
t
2
5
10