IRLML6402TR International Rectifier, IRLML6402TR Datasheet - Page 2

• Manufacturer Part Number: IRLML6402TR
• Description: MOSFET P-CH 20V 3.7A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML6402TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 633pF @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLML6402TR; IRLML6402; IRLML6402; IRLML6402CT

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‚
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
S
SM
rr
d(on)
r
d(off)
f
DSS
2
fs
SD
GSS
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
DS(on)
For recommended footprint and soldering techniques refer to application note #AN-994.
(BR)DSS
max. junction temperature.
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
R
Starting T
G
-0.40 -0.55 -1.2
Min. Typ. Max. Units
= 25Ω, I
Min. Typ. Max. Units
–––
–––
–––
–––
––– -0.009 –––
––– 0.050 0.065
––– 0.080 0.135
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-20
6.0
J
–––
–––
–––
–––
–––
–––
–––
110
––– -100
–––
350
588
381
633
145
8.0
1.2
2.8
29
11
48
= 25°C, L = 1.65mH
AS
= -3.7A.
-1.2
–––
–––
-1.0
100
–––
–––
–––
–––
–––
–––
–––
-1.3
-25
1.8
4.2
43
17
12
-22
V/°C
nC
nC
ns
pF
V
V
Ω
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs ‚
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -3.7A
= -3.7A
= 25°C, I
= 25°C, I
= 2.7Ω
= 89Ω
= V
= -10V, I
= -20V, V
= -20V, V
= -10V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -12V
= 12V
= -5.0V ‚
= -10V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -1.0A, V
= -1.0A
D
D
= -250µA
GS
GS
= -3.7A ‚
= -3.7A ‚
= -3.1A ‚
= 0V
= 0V, T
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D
= -1mA ‚
GS
J
G
= 70°C
= 0V ‚
S
D