IRLML6402TR International Rectifier, IRLML6402TR Datasheet - Page 3

• Manufacturer Part Number: IRLML6402TR
• Description: MOSFET P-CH 20V 3.7A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML6402TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 633pF @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLML6402TR; IRLML6402; IRLML6402; IRLML6402CT

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100
10
100
1
10
Fig 1. Typical Output Characteristics
0.1
Fig 3. Typical Transfer Characteristics
2.0
TOP
BOTTOM
-V
DS
-V
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
3.0
GS
, Drain-to-Source Voltage (V)
T = 25 C
, Gate-to-Source Voltage (V)
J
4.0
1
°
-2.25V
5.0
20µs PULSE WIDTH
T = 25 C
T = 150 C
V
20µs PULSE WIDTH
J
J
DS
10
6.0
= -15V
°
°
7.0
100
8.0
100
2.0
1.5
1.0
0.5
0.0
10
1
-60 -40 -20
0.1
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
TOP
BOTTOM
D
-V
-3.7A
DS
T , Junction Temperature ( C)
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20 40
-2.25V
60 80 100 120 140 160
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
-4.5V
3
100