IRF7452 International Rectifier, IRF7452 Datasheet - Page 4

• Manufacturer Part Number: IRF7452
• Description: MOSFET N-CH 100V 4.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7452

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7452

IRF7452
100000
4
10000
1000
100
100
0.1
10
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 150 C
J
V
V DS , Drain-to-Source Voltage (V)
SD
0.4
Forward Voltage
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss
SHORTED
C rss
C oss = C ds + C gd
0.6
= C gd
10
= C gs + C gd ,
0.8
T = 25 C
J
f = 1 MHZ
Coss
Ciss
Crss
°
V
1.0
GS
= 0 V
C ds
1.2
100
1000
100
20
16
12
0.1
10
8
4
0
1
Fig 8. Maximum Safe Operating Area
0
1
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
A
J
= 25 C
= 150 C
2.7A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
10
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
10
20
BY R
V
V
V
DS
DS
DS
DS(on)
= 80V
= 50V
= 20V
FOR TEST CIRCUIT
30
SEE FIGURE
100
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10us
100us
1ms
10ms
40
13
1000
50