IRF7452 International Rectifier, IRF7452 Datasheet - Page 6
![MOSFET N-CH 100V 4.5A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7452
Manufacturer Part Number
IRF7452
Description
MOSFET N-CH 100V 4.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7452.pdf
(8 pages)
Specifications of IRF7452
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 2.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
930pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7452
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IRF7452
I
AS
12V
Fig 14a&b. Unclamped Inductive Test circuit
6
V
Fig 13a&b. Basic Gate Charge Test Circuit
GS
Same Type as D.U.T.
0.06
0.05
0.04
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2 F
50K
3mA
t p
Current Sampling Resistors
0
.3 F
I
G
V
(BR)DSS
V GS = 10V
D.U.T.
I
4
D
and Waveforms
and Waveform
I D , Drain Current (A)
+
-
V
DS
V
8
R G
GS
20V
V DS
V GS = 15V
t p
V
G
12
Q
I AS
GS
D.U.T
0.01
L
Charge
Q
Q
GD
G
16
15V
DRIVER
20
+
-
V DD
A
Fig 13. On-Resistance Vs. Gate Voltage
0.08
0.07
0.06
0.05
0.04
500
400
300
200
100
0
Fig 14c. Maximum Avalanche Energy
25
7.0
Starting T , Junction Temperature ( C)
8.0
V GS, Gate -to -Source Voltage (V)
50
9.0
Vs. Drain Current
J
10.0
75
11.0
I D = 2.7A
100
12.0
www.irf.com
TOP
BOTTOM
13.0
125
14.0
°
2.0A
3.6A
4.5A
I D
15.0
150