IRF7459 International Rectifier, IRF7459 Datasheet - Page 3

• Manufacturer Part Number: IRF7459
• Description: MOSFET N-CH 20V 12A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7459

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2480pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7459

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1000
100
1000
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
100
0.1
1
10
2.0
1
0.1
T = 150 C
J
V
GS
V DS , Drain-to-Source Voltage (V)
°
2.5
, Gate-to-Source Voltage (V)
T = 25 C
J
1
°
3.0
20µs PULSE WIDTH
Tj = 25°C
2.0V
V
20µs PULSE WIDTH
DS
= 15V
10
3.5
TOP
BOTTOM 2.00V
VGS
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
4.0
100
1000
100
10
Fig 2. Typical Output Characteristics
1
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
I =
D
12A
V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
20
40
20µs PULSE WIDTH
Tj = 150°C
2.0V
60
IRF7459
80 100 120 140 160
10
TOP
BOTTOM 2.00V
V
°
GS
=
VGS
10V
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
3
100