IRF7459 International Rectifier, IRF7459 Datasheet - Page 6

• Manufacturer Part Number: IRF7459
• Description: MOSFET N-CH 20V 12A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7459

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2480pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7459

IRF7459
I
A S
12V
Fig 14a&b. Unclamped Inductive Test circuit
V
Fig 13a&b. Basic Gate Charge Test Circuit
GS
6
Same Type as D.U.T.
0.010
0.009
0.008
0.007
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2 F
50K
3mA
t p
Current Sampling Resistors
.3 F
0
I
G
V
(B R )D S S
D.U.T.
I
D
and Waveforms
20
and Waveform
+
-
V
I D , Drain Current (A)
DS
V
V GS = 4.5V
40
GS
R G
20 V
V D S
V GS = 10V
V
t p
G
Q
I A S
GS
D.U .T
60
0.0 1
L
Q
Charge
Q
GD
G
80
1 5 V
DRIVER
+
-
100
V D D
A
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
Fig 14. On-Resistance Vs. Gate Voltage
700
600
500
400
300
200
100
0
Fig 14c. Maximum Avalanche Energy
2.0
25
Starting T , Junction Temperature ( C)
V GS, Gate -to -Source Voltage (V)
2.5
50
Vs. Drain Current
J
3.0
75
I D = 12A
100
3.5
TOP
BOTTOM
www.irf.com
125
4.0
°
4.3A
7.7A
9.6A
I D
150
4.5