IRF7460 International Rectifier, IRF7460 Datasheet - Page 2

• Manufacturer Part Number: IRF7460
• Description: MOSFET N-CH 20V 12A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7460

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2050pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7460

Diode Characteristics
Dynamic @ T
Avalanche Characteristics
IRF7460
Static @ T
Symbol
E
I
V
Symbol
I
I
t
Q
t
Q
V
R
V
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
I
AR
SM
I
S
rr
rr
d(on)
r
d(off)
f
DSS
GSS
V
fs
AS
SD
(BR)DSS
GS(th)
iss
oss
rss
DS(on)
g
gs
gd
oss
rr
rr
2
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Diode Forward Voltage
Static Drain-to-Source On-Resistance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
–––
–––
26
–––
–––
–––
––– 0.66 –––
–––
–––
20
0.089
2050 –––
1060 –––
10.5
–––
–––
–––
150
–––
–––
–––
–––
–––
––– -200
6.9
6.0
6.9
4.3
0.8
7.2
19
17
11
12
44
60
44
64
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
200
1.3
3.0
90
96
26
2.3
100
66
66
–––
20
10
14
nC
nC
nC
µA
nA
ns
pF
ns
ns
V/°C
m
V
V
V
S
A
Typ.
–––
–––
showing the
p-n junction diode.
T
T
di/dt = 100A/µs „
di/dt = 100A/µs „
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
T
T
V
V
V
V
V
V
V
V
I
D
D
Reference to 25°C, I
J
J
J
J
DS
DS
GS
GS
DD
GS
GS
DS
GS
GS
GS
DS
DS
DS
GS
GS
G
= 9.6A
= 9.6A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8
= 10V
= 10V
= V
= 16V, V
= 16V, V
= 16V, I
= 4.5V, „
= 0V, V
= 10V
= 4.5V
= 0V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
GS
, I
D
S
F
DS
D
D
D
Conditions
S
F
= 250µA
D
GS
GS
Conditions
Conditions
„
= 9.6A, V
= 9.6A, V
= 250µA
= 9.6A
= 12A
= 9.6A, V
= 9.6A, V
= 9.6A
= 10V
Max.
240
= 0V, T
= 0V
9.6
www.irf.com
D
„
GS
R
= 1mA
J
„
=10V
GS
R
= 125°C
=10V
G
= 0V
= 0V „
Units
mJ
A
„
D
S