IRF7460 International Rectifier, IRF7460 Datasheet - Page 5

• Manufacturer Part Number: IRF7460
• Description: MOSFET N-CH 20V 12A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7460

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2050pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7460

Fig 6. On-Resistance Vs. Drain Current
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0.01
100
0.1
12
10
10
0.00001
8
6
4
2
0
1
25
D = 0.50
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.1
t
R
d(on)
Pulse Width
Duty Factor
G
4.5V
1. Duty factor D = t / t
2. Peak T = P
V
Notes:
GS
t
r
V
DS
1
J
µs
DM
x Z
1
D.U.T.
thJA
t
P
2
IRF7460
d(off)
DM
R
+ T
10
D
A
t
t
1
f
t
2
+
-
V
DD
100
5