IRLR024NTRR International Rectifier, IRLR024NTRR Datasheet - Page 4

• Manufacturer Part Number: IRLR024NTRR
• Description: MOSFET N-CH 55V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR024NTRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRLR/U024N
4
1 0 0
1 0
8 0 0
6 0 0
4 0 0
2 0 0
1
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 1 75 °C
Drain-to-Source Voltage
J
C
C
C
V
V
iss
oss
rss
S D
D S
0.8
, S ource-to-D rain V oltage (V)
Forward Voltage
V
C
C
C
, D rain-to-S ourc e V oltage (V )
G S
is s
rs s
o ss
= 0V ,
= C
= C
= C
T = 25°C
J
g s
g d
d s
1.2
+ C
+ C
1 0
g d
gd
f = 1M H z
, C
d s
1.6
S H O R T E D
V
G S
= 0V
2.0
1 0 0
A
A
1 0 0 0
1 5
1 2
Fig 8. Maximum Safe Operating Area
1 0 0
9
6
3
0
1 0
1
0
I
1
Fig 6. Typical Gate Charge Vs.
D
T
T
S ingle P ulse
C
J
= 11 A
Gate-to-Source Voltage
= 25°C
= 175°C
O P E R AT ION IN TH IS AR E A LIM ITE D
V
Q , T otal G ate C harge (nC )
4
D S
G
, Drain-to-Source Voltage (V)
8
B Y R
V
V
D S
D S
1 0
D S (on)
= 4 4V
= 2 8V
FO R TE S T C IRC UIT
1 2
S E E FIG U R E 1 3
www.irf.com
1 6
1 0µ s
1 00 µ s
1 m s
1 0m s
1 0 0
2 0
A
A