IRLR024NTRR International Rectifier, IRLR024NTRR Datasheet - Page 6

• Manufacturer Part Number: IRLR024NTRR
• Description: MOSFET N-CH 55V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR024NTRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRLR/U024N
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
Fig 13a. Basic Gate Charge Waveform
10 V
I
A S
V
G
R G
2 0 V
V D S
Q
GS
t p
I A S
t p
D .U .T
0 .0 1
L
Q
Charge
Q
GD
G
V
(B R )D SS
1 5 V
D R IV E R
+
-
V D D
A
1 4 0
1 2 0
1 0 0
8 0
6 0
4 0
2 0
0
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
12V
2 5
V
V
GS
D D
S tarting T , J unc tion T em perature (°C )
Same Type as D.U.T.
= 25 V
Current Regulator
5 0
.2 F
Vs. Drain Current
50K
3mA
J
Current Sampling Resistors
7 5
.3 F
I
G
1 0 0
D.U.T.
1 2 5
I
www.irf.com
D
T O P
B O T T O M
+
-
1 5 0
V
DS
7.8 A
1 1A
4 .5 A
I
D
1 7 5
A