IRLU3715 International Rectifier, IRLU3715 Datasheet - Page 2

• Manufacturer Part Number: IRLU3715
• Description: MOSFET N-CH 20V 54A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3715

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 54A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1060pF @ 10V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLU3715

IRLR/U3715
Diode Characteristics
Dynamic @ T
Avalanche Characteristics
Static @ T
Symbol
E
I
V
R
V
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
V
I
Symbol
I
I
t
Q
t
Q
I
AR
d(on)
r
d(off)
f
SM
DSS
S
rr
rr
V
GSS
2
fs
AS
(BR)DSS
GS(th)
SD
DS(on)
gs
gd
oss
iss
oss
rss
g
rr
rr
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
J
Static Drain-to-Source On-Resistance
Diode Forward Voltage
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
Min. Typ. Max. Units
20
26
–––
–––
–––
–––
–––
–––
–––
–––
0.022
1060 –––
–––
–––
–––
–––
–––
––– -200
–––
700
120
–––
–––
3.8
4.4
6.4
5.1
0.9
0.8
11
15
11
11
73
12
37
28
38
30
–––
100
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
210
54
–––
3.0
1.3
–––
20
17
17
56
42
57
45
14
20
„
m
V/°C
µA
nA
nC
ns
pF
nC
nC
ns
ns
V
V
S
A
V
Typ.
–––
–––
I
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs ƒ
T
di/dt = 100A/µs ƒ
D
integral reverse
D
Reference to 25°C, I
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
GS
GS
DS
J
J
J
J
G
= 21A
= 21A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8
= V
= 16V, V
= 16V, V
= 10V, I
= 10V
= 10V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V
= 0V, V
= 10V
= 4.5V
= 0V
GS
, I
D
S
F
DS
D
D
D
Conditions
D
= 250µA
S
GS
GS
F
Conditions
Conditions
ƒ
= 21A, V
= 21A, V
= 250µA
= 26A
= 21A
= 21A
= 21A, V
= 21A, V
= 10V
Max.
= 0V
= 0V, T
110
21
www.irf.com
D
GS
R
ƒ
= 1mA
ƒ
=20V
R
J
GS
=20V
= 125°C
= 0V ƒ
G
= 0V ƒ
Units
mJ
A
S
D