IRLU3715 International Rectifier, IRLU3715 Datasheet - Page 3

MOSFET N-CH 20V 54A I-PAK

IRLU3715

Manufacturer Part Number
IRLU3715
Description
MOSFET N-CH 20V 54A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLU3715

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
54A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1060pF @ 10V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLU3715

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLU3715PBF
Manufacturer:
TI
Quantity:
5 354
www.irf.com
1000
100
1000
10
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
0.1
10
2.0
1
0.1

TOP
BOTTOM
3.0
V
V
GS
DS
VGS
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
2.5V
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4.0
1

T = 25 C
J
5.0
2.5V


V
20µs PULSE WIDTH
°
DS
20µs PULSE WIDTH
T = 25 C

J
T = 175 C
6.0
J
= 15V
10
°
7.0
°
8.0
100
1000
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
0.1

I =

D
TOP
BOTTOM
52A
V
T , Junction Temperature ( C)
DS
VGS
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
2.5V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
IRLR/U3715
2.5V

20µs PULSE WIDTH
T = 175 C
J
10

°
V
°
GS
=
10V
3
100

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