IRF5802 International Rectifier, IRF5802 Datasheet - Page 2

• Manufacturer Part Number: IRF5802
• Description: MOSFET N-CH 150V 900MA 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5802

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 540mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 88pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Diode Characteristics
IRF5802
Dynamic @ T
Avalanche Characteristics
Static @ T
V
R
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
I
DSS
GSS
AR
SM
d(on)
r
d(off)
f
S
rr
V
fs
AS
DS(on)
(BR)DSS
GS(th)
SD
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
(BR)DSS
2
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
0.55
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
0.19
–––
–––
–––
–––
–––
–––
––– -100
–––
110
–––
–––
–––
4.5
6.0
7.5
9.2
3.0
1.0
2.4
1.6
7.7
46
55
88
26
14
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.2
5.5
6.8
1.5
3.6
1.3
25
1.8
69
83
18
V/°C
µA
nA
ns
nC
nC
pF
ns
V
V
S
A
V
Typ.
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs ƒ
MOSFET symbol
integral reverse
Reference to 25°C, I
I
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 0.54A
= 25°C, I
= 25°C, I
= 0.54A
= 6.0
= 0V, I
= 10V, I
= V
= 150V, V
= 120V, V
= 30V
= -30V
= 50V, I
= 120V
= 10V,
= 75V
= 10V ƒ
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 0.54A, V
= 0.54A
= 0.54A
= 250µA
= 0.54A
GS
GS
= 0V to 120V …
Max.
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
9.5
0.9
= 0V
= 0V, T
D
www.irf.com
= 1mA ƒ
GS
ƒ
J
G
= 125°C
= 0V ƒ
Units
mJ
A
D
S