IRF5802 International Rectifier, IRF5802 Datasheet - Page 4

• Manufacturer Part Number: IRF5802
• Description: MOSFET N-CH 150V 900MA 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5802

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 540mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 88pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF5802
1000
4
100
0.1
10
10
1
1
0.4
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
V
T = 150 C
J
SD
Coss
Crss
Ciss
V DS , Drain-to-Source Voltage (V)
Drain-to-Source Voltage
0.6
,Source-to-Drain Voltage (V)
Forward Voltage
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
0.8
T = 25 C
J
f = 1 MHZ
100
1.0
°
V
GS
SHORTED
= 0 V
1.2
1000
0.01
100
0.1
10
Fig 8. Maximum Safe Operating Area
20
16
12
1
8
4
0
0
1
I =
T A = 25°C
T J = 150°C
Single Pulse
D
Fig 6. Typical Gate Charge Vs.
0.54A
V DS , Drain-toSource Voltage (V)
Gate-to-Source Voltage
1
Q , Total Gate Charge (nC)
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
2
V
V
V
DS
DS
DS
= 120V
= 75V
= 30V
3
100
www.irf.com
4
100µsec
1msec
10msec
5
1000
6