IRF7450 International Rectifier, IRF7450 Datasheet - Page 4

• Manufacturer Part Number: IRF7450
• Description: MOSFET N-CH 200V 2.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7450

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7450

IRF7450
10000
1000
100
4
10
100
0.1
10
1
1
Fig 5. Typical Capacitance Vs.
0.2
Fig 7. Typical Source-Drain Diode
Drain-to-Source Voltage
Coss
Ciss
Crss
V DS , Drain-to-Source Voltage (V)

T = 150 C
V
J
SD
0.4
Forward Voltage
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
°
0.6
0.8
f = 1 MHZ
100

T = 25 C
J

V
1.0
SHORTED
GS
°
= 0 V
1000
1.2
100
0.1
10
20
16
12
1
8
4
0
0
Fig 8. Maximum Safe Operating Area

1
I =
Fig 6. Typical Gate Charge Vs.
D
T A = 25°C
T J = 150°C
Single Pulse
1.5A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10

V
V
V
DS
DS
DS
20
= 160V
= 100V
= 40V
100
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30
100µsec
10msec
1msec
1000
40