IRF7450 International Rectifier, IRF7450 Datasheet - Page 5

MOSFET N-CH 200V 2.5A 8-SOIC

IRF7450

Manufacturer Part Number
IRF7450
Description
MOSFET N-CH 200V 2.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7450

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
170 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
940pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7450

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0.01
2.5
2.0
1.5
1.0
0.5
0.0
100
0.1
10
0.00001
1
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
Ambient Temperature
T , Case Temperature ( C)
C

(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
t , Rectangular Pulse Duration (sec)
125
°
1
0.01
150
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
0.1
DS
GS

t
R
d(on)
Pulse Width
Duty Factor
G
1. Duty factor D = t / t
2. Peak T = P
Notes:
10V
V
GS
t
r
V
1
J
DS
µs
DM
x Z
1

thJA
P
2
D.U.T.
DM
t
+ T
IRF7450
d(off)
10
R
A
t
D
1
t
t
f
2
+
-
V
100
DD
5

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