IRF7465 International Rectifier, IRF7465 Datasheet - Page 3

MOSFET N-CH 150V 1.9A 8-SOIC

IRF7465

Manufacturer Part Number
IRF7465
Description
MOSFET N-CH 150V 1.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7465

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 1.14A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
330pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7465

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100
0.1
10
100
1
Fig 3. Typical Transfer Characteristics
0.1
Fig 1. Typical Output Characteristics
10
1
0.1
6.0
TOP
BOTTOM 6.0V

T = 150 C
J
V DS , Drain-to-Source Voltage (V)
V
GS
VGS
8.0V
7.5V
7.0V
6.5V
15V
12V
10V
7.0
°
, Gate-to-Source Voltage (V)

T = 25 C
J
1
°
8.0
6.0V

20µs PULSE WIDTH
Tj = 25°C
V
20µs PULSE WIDTH
DS
10
= 25V
9.0
10.0
100
100
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
1
-60 -40 -20
0.1
Fig 2. Typical Output Characteristics

Fig 4. Normalized On-Resistance
I =
D
TOP
BOTTOM 6.0V
1.9A
V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
VGS
8.0V
7.5V
7.0V
6.5V
15V
12V
10V
Vs. Temperature
0
1
20
40
20µs PULSE WIDTH
Tj = 150°C
60
IRF7465
6.0V
80 100 120 140 160
10

V
°
GS
=
10V
3
100

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