IRF7465 International Rectifier, IRF7465 Datasheet - Page 4

• Manufacturer Part Number: IRF7465
• Description: MOSFET N-CH 150V 1.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7465

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1.14A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7465

IRF7465
10000
1000
4
100
10
1
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
1
Fig 7. Typical Source-Drain Diode
0.4
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)

V
T = 150 C
J
SD
Forward Voltage
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
10
Coss
Crss
0.6
Ciss
°
= C gs + C gd , C ds
f = 1 MHZ
100
0.8


T = 25 C
V
J
GS
SHORTED
= 0 V
°
1000
1.0
100
0.1
10
1
20
16
12
8
4
0
Fig 8. Maximum Safe Operating Area
1
0
T A = 25°C
T J = 150°C
Single Pulse
Fig 6. Typical Gate Charge Vs.

I =
D
1.14A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
4
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)

V
V
V
DS
DS
DS
8
= 120V
= 75V
= 30V
100
www.irf.com
12
100µsec
10msec
1msec
1000
16