IRF7451 International Rectifier, IRF7451 Datasheet - Page 2

• Manufacturer Part Number: IRF7451
• Description: MOSFET N-CH 150V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7451

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 990pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7451

Diode Characteristics
IRF7451
Dynamic @ T
Avalanche Characteristics
Static @ T
E
I
V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
AR
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
V
fs
2
AS
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
3.5
Min. Typ. Max. Units
–––
–––
–––
–––
–––
1260 –––
0.19 –––
–––
––– 0.09
–––
–––
–––
–––
––– -100
–––
990
220
100
180
–––
–––
–––
270
6.8
4.2
28
13
10
17
15
42
76
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
110
400
5.5
1.3
25
41
10
20
2.3
29
V/°C
µA
nA
nC
ns
pF
nC
ns
V
V
S
A
V
Typ.
–––
–––
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
J
J
= 2.2A
= 2.2A
= 25°C, I
= 25°C, I
= 6.5
= V
= 150V, V
= 120V, V
= 25V, I
= 120V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V
= 75V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 2.2A, V
= 2.2A
= 250µA
= 2.2A
= 2.2A
GS
GS
= 0V to 120V
Max.
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
210
3.6
= 0V, T
= 0V
D
www.irf.com
= 1mA
GS
J
G
= 0V
= 150°C
Units
mJ
A
S
D