IRF7451 International Rectifier, IRF7451 Datasheet - Page 4

• Manufacturer Part Number: IRF7451
• Description: MOSFET N-CH 150V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7451

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 990pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7451

IRF7451
4
100000
10000
1000
100
0.1
100
10
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
V
T = 150 C
J
SD
V DS , Drain-to-Source Voltage (V)
Forward Voltage
0.4
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss
C oss = C ds + C gd
°
10
= C gd
0.6
Ciss
Coss
Crss
f = 1 MHZ
100
0.8
T = 25 C
V
J
GS
= 0 V
°
1000
1.0
100
16
12
0.1
10
8
4
0
1
Fig 8. Maximum Safe Operating Area
0
Fig 6. Typical Gate Charge Vs.
1
I =
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
2.2A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
Q , Total Gate Charge (nC)
°
G
°
10
, Drain-to-Source Voltage (V)
10
V
V
V
BY R
DS
DS
DS
20
= 120V
= 75V
= 30V
DS(on)
www.irf.com
100
30
10us
100us
1ms
10ms
1000
40