IRF7492 International Rectifier, IRF7492 Datasheet - Page 3

MOSFET N-CH 200V 3.7A 8-SOIC

IRF7492

Manufacturer Part Number
IRF7492
Description
MOSFET N-CH 200V 3.7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7492

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
79 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
1820pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7492

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100.00
10.00
0.001
Fig 3. Typical Transfer Characteristics
1.00
0.10
0.01
Fig 1. Typical Output Characteristics
100
0.1
10
1
4.0
0.1
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5.0
1
T J = 150°C
5.5V
6.0
10
20µs PULSE WIDTH
Tj = 25°C
V DS = 50V
20µs PULSE WIDTH
T J = 25°C
TOP
BOTTOM
100
7.0
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
1000
8.0
100
0.1
10
1
Fig 2. Typical Output Characteristics
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60
Fig 4. Normalized On-Resistance
I
D
=
-40
V DS , Drain-to-Source Voltage (V)
3.7A
-20
1
Tj, Junction Temperature (°C)
Vs. Temperature
0
20
10
5.5V
40
20µs PULSE WIDTH
Tj = 150°C
60
IRF7492
80
TOP
BOTTOM
100
100
V
120
GS
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
=
140
10V
1000
3
160

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