IRF7492 International Rectifier, IRF7492 Datasheet - Page 4

• Manufacturer Part Number: IRF7492
• Description: MOSFET N-CH 200V 3.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7492

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1820pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7492

IRF7492
100000
10000
4
1000
100
0.1
100
10
10
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
V
T = 150
J
SD
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.4
Forward Voltage
°
C
10
C rss
C oss
C iss
0.6
f = 1 MHZ
100
T = 25
J
0.8
V
GS
= 0 V
°
C
1000
1.0
100
0.1
10
1
12
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0
Tc = 25°C
Tj = 150°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
I D = 2.2A
V DS , Drain-to-Source Voltage (V)
Gate-to-Source Voltage
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 160V
V DS = 100V
V DS = 40V
20
30
100
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100µsec
10msec
40
1msec
1000
50