IRFR4105Z International Rectifier, IRFR4105Z Datasheet - Page 3
![MOSFET N-CH 55V 30A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRFR4105Z
Manufacturer Part Number
IRFR4105Z
Description
MOSFET N-CH 55V 30A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFU4105ZTR.pdf
(12 pages)
Specifications of IRFR4105Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24.5 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
740pF @ 25V
Power - Max
48W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR4105Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR4105Z
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFR4105Z
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFR4105ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRFR4105ZTRPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
www.irf.com
1000
1000
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
100
0.1
10
10
1
0
1
0.1
4
0
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5
T J = 25°C
6
1
1
4.5V
7
60µs PULSE WIDTH
Tj = 25°C
V DS = 25V
60µs PULSE WIDTH
10
10
8
9
100
100
10
1000
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
100
30
25
20
15
10
10
1
5
0
0.1
0
0
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
Vs. Drain Current
10
1
1
T J = 25°C
4.5V
T J = 175°C
V DS = 8.0V
380µs PULSE WIDTH
20
60µs PULSE WIDTH
Tj = 175°C
10
10
30
3
100
100
40