IRFR4105Z International Rectifier, IRFR4105Z Datasheet - Page 4
![MOSFET N-CH 55V 30A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRFR4105Z
Manufacturer Part Number
IRFR4105Z
Description
MOSFET N-CH 55V 30A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFU4105ZTR.pdf
(12 pages)
Specifications of IRFR4105Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24.5 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
740pF @ 25V
Power - Max
48W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR4105Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR4105Z
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFR4105Z
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFR4105ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRFR4105ZTRPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
4
1000.0
100.0
1200
1000
10.0
800
600
400
200
1.0
0.1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
V SD , Source-toDrain Voltage (V)
V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Ciss
Coss
Crss
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
1000
100
0.1
20
16
12
10
Fig 8. Maximum Safe Operating Area
8
4
0
1
Fig 6. Typical Gate Charge Vs.
0
1
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 18A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
5
Q G Total Gate Charge (nC)
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 44V
VDS= 28V
VDS= 11V
15
FOR TEST CIRCUIT
SEE FIGURE 13
100µsec
10msec
100
www.irf.com
1msec
20
25
1000
30