STP80NE06-10 STMicroelectronics, STP80NE06-10 Datasheet - Page 3

MOSFET N-CH 60V 80A TO-220

STP80NE06-10

Manufacturer Part Number
STP80NE06-10
Description
MOSFET N-CH 60V 80A TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of STP80NE06-10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
10000pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2778-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP80NE06-10
Manufacturer:
ST
0
Part Number:
STP80NE06-10&
Manufacturer:
ST
0
Part Number:
STP80NE06-10������
Manufacturer:
ST
0
ELECTRICAL CHARACTERISTICS (T
Table 6. Off
Table 7. On
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 8. Dynamic
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 9. Switching On
Table 10. Switching Off
V
Symbol
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
t
t
I
C
I
r(Voff)
GS(th)
DS(on)
C
C
d(on)
Q
Q
DSS
GSS
fs
Q
t
oss
t
t
iss
rss
gd
c
r
gs
r
g
(1)
Drain-source
Breakdown Voltage
Zero Gate Voltage Drain
Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
(1)
Parameter
Parameter
Parameter
Parameter
Parameter
GS
DS
= 0)
= 0)
I
V
V
V
V
V
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
DS
DS
DD
GS
DD
DD
GS
= 250 mA; V
case
= Max Rating
= Max Rating;Tc = 125 °C
= ± 20 V
= V
= 10V; I
> I
= 25 V; f = 1 MHz; V
= 30 V; I
= 10 V (see test circuit, Figure 16)
= 48 V; I
= 48 V;I
= 10 V (see test circuit, Figure 18)
D(on)
= 25°C unless otherwise specified)
GS
; I
x R
Test Conditions
Test Conditions
D
D
Test Conditions
Test Conditions
Test Conditions
D
D
D
= 40 A
= 250 µA
= 40 A; R
GS
= 0 A; R
= 80 A; V
DS(on)max
= 0
G
G
GS
; I
GS
= 4.7 Ω
= 4.7 Ω
D
= 10 V
= 0
= 40 A
Min.
Min.
Min.
Min.
Min.
60
19
2
7600
Typ.
Typ.
Typ.
Typ.
Typ.
890
150
150
140
130
8.5
38
50
20
50
45
75
3
STP80NE06-10
10000
± 100
1100
Max.
Max.
Max.
Max.
Max.
200
200
100
170
10
10
65
60
1
4
Unit
Unit
Unit
Unit
Unit
µA
µA
nA
pF
pF
nC
nC
nC
pF
ns
ns
ns
ns
ns
V
V
S
3/10

Related parts for STP80NE06-10