STP80NE06-10 STMicroelectronics, STP80NE06-10 Datasheet - Page 4
![MOSFET N-CH 60V 80A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP80NE06-10
Manufacturer Part Number
STP80NE06-10
Description
MOSFET N-CH 60V 80A TO-220
Manufacturer
STMicroelectronics
Datasheet
1.STP80NE06-10.pdf
(10 pages)
Specifications of STP80NE06-10
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
10000pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2778-5
Available stocks
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Part Number
Manufacturer
Quantity
Price
STP80NE06-10
Table 11. Source Drain Diode
Note: 1. Pulse width limited by safe operating area
Figure 3. Safe Operating Area
Figure 5. Output Characteristics
4/10
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
rr
(2)
(1)
Source-drain Current
Source-drain Current
(pulsed)
ForwardM On Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Parameter
I
I
V
(see test circuit, Figure 18)
SD
SD
DD
= 80 A; V
= 80 A; di/dt = 100 A/µs
= 30 V; T
Test Conditions
GS
j
= 150 °C
= 0
Figure 4. Thermal Impedance
Figure 6. Transfer Characteristics
Min.
Typ.
100
0.4
8
Max.
320
1.5
80
Unit
µC
ns
A
A
V
A