IRF3709ZCS International Rectifier, IRF3709ZCS Datasheet - Page 6

• Manufacturer Part Number: IRF3709ZCS
• Description: MOSFET N-CH 30V 87A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3709ZCS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 87A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2130pF @ 15V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3709ZCS

12V
6
I
AS
V
Fig 15a&b. Unclamped Inductive Test circuit
GS
Fig 14a&b. Basic Gate Charge Test Circuit
9.00
8.00
7.00
6.00
5.00
4.00
Same Type as D.U.T.
Current Regulator
Fig 12. On-Resistance vs. Drain Current
.2µF
10.0
50KΩ
3mA
t p
Current Sampling Resistors
.3µF
I
G
20.0
V
(BR)DSS
D.U.T.
I
and Waveforms
and Waveform
D
I D , Drain Current (A)
30.0
T J = 25°C
T J = 125°C
+
-
V
DS
R G
40.0
20V
V DS
Vgs(th)
Qgs1 Qgs2
Vds
t p
50.0
I AS
D.U.T
0.01 Ω
L
Qgd
Vgs = 10V
60.0
Qgodr
15V
DRIVER
70.0
+
-
Vgs
V DD
Id
A
Fig 13. On-Resistance vs. Gate Voltage
250
200
150
100
16
14
12
10
50
8
6
4
2
0
0
Fig 16. Maximum Avalanche Energy
25
2
Starting T J , Junction Temperature (°C)
3
V GS, Gate -to -Source Voltage (V)
50
vs. Drain Current
4
75
5
T J = 25°C
100
6
T J = 125°C
7
TOP
BOTTOM 17A
125
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8
I D = 21A
150
I D
8.0A
5.4A
9
175
10