IRF3709ZCS International Rectifier, IRF3709ZCS Datasheet - Page 7
![MOSFET N-CH 30V 87A D2PAK](/photos/5/40/54080/21-d2pak_smd-220_sml.jpg)
IRF3709ZCS
Manufacturer Part Number
IRF3709ZCS
Description
MOSFET N-CH 30V 87A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3709ZCS.pdf
(12 pages)
Specifications of IRF3709ZCS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.3 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
87A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
2130pF @ 15V
Power - Max
79W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3709ZCS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF3709ZCS
Manufacturer:
IR
Quantity:
12 500
www.irf.com
+
R
-
D.U.T
Fig 17.
+
-
•
•
•
•
SD
•
•
•
90%
V
10%
V
Fig 18a. Switching Time Test Circuit
DS
Fig 18b. Switching Time Waveforms
GS
-
G
HEXFET
t
d(on)
+
Duty Factor < 0.1%
V
Pulse Width < 1µs
V
GS
t
®
r
+
Power MOSFETs
-
V
Re-Applied
Voltage
DS
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
D.U.T
L
P.W.
t
D
SD
f
= 5V for Logic Level Devices
DS
V
Waveform
Waveform
DD
+
-
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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