IRF740 STMicroelectronics, IRF740 Datasheet - Page 4

• Manufacturer Part Number: IRF740
• Description: MOSFET N-CH 400V 10A TO-220
• Manufacturer: STMicroelectronics

Specifications of IRF740

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2931-5

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
C
I
I
C
DS(on)
C
Q
GS(th)
d(on)
Q
DSS
GSS
fs
Q
oss
t
iss
rss
gs
gd
r
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise Time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
I
V
V
V
R
(see Figure 12)
V
V
I
V
V
V
V
V
D
D
GS
GS
DS
DS
DD
DD
GS
GS
G
DS
DS
DS
= 6A
= 250 µA, V
= 4.7Ω, V
=0
=320V, I
= V
= 10V, I
> I
=25V, f=1 MHz,
=10V
= Max rating,
= Max rating @125°C
= ±20V
= 200V, I
Test conditions
Test conditions
D(on)
GS
, I
D
D
x R
D
= 5.3A
GS
D
= 250µA
= 10.7A
GS
= 5A,
DS(on)max,
= 10V
= 0
Min.
Min.
400
2
1400
Typ.
Typ.
0.46
220
27
17
10
35
11
12
7
3
Max.
±
Max.
0.55
43
50
100
1
4
IRF740
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
V
V
Ω
S