IRF740 STMicroelectronics, IRF740 Datasheet

MOSFET N-CH 400V 10A TO-220

IRF740

Manufacturer Part Number
IRF740
Description
MOSFET N-CH 400V 10A TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of IRF740

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2931-5

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Order codes
General features
Description
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns swithing
speed, gate charge and ruggedness.
Applications
August 2006
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
Very low intrinsic capacitances
Switching application
IRF740
Type
Part number
IRF740
(@Tjmax)
V
400V
DSS
R
<0.55Ω
DS(on)
IRF740@
Marking
10A
I
N-channel 400V - 0.46Ω - 10A TO-220
D
Rev 4
PowerMESH™ II Power MOSFET
Internal schematic diagram
Package
TO-220
TO-220
1
2
3
Packaging
Tube
IRF740
www.st.com
1/12
12

IRF740 Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number IRF740 August 2006 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH™ II Power MOSFET R I DS(on) D <0.55Ω 10A Internal schematic diagram Marking IRF740@ Rev 4 IRF740 TO-220 Package Packaging TO-220 Tube 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ IRF740 ...

Page 3

... IRF740 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T tot Derating Factor (2) dv/dt Peak diode recovery voltage slope T Storage temperature ...

Page 4

... Parameter Test conditions V > D(on =25V, f=1 MHz 200V 4.7Ω (see Figure 12) V =320V =10V GS Min. Typ. Max 400 100 ± = 250µ 5.3A 0.46 0.55 Min. Typ. Max. DS(on)max, 7 1400 220 10V 10. IRF740 Unit V µA µ Ω Unit ...

Page 5

... IRF740 Table 6. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter Test conditions ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance IRF740 ...

Page 7

... IRF740 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 ...

Page 8

... Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform IRF740 ...

Page 9

... IRF740 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... IRF740 inch MIN. TYP. MAX. 0.173 0.181 0.024 0.034 0.045 0.066 0.019 0.027 0.60 0.620 0.393 0.409 0.094 0.106 0.194 0.202 0.048 0.052 ...

Page 11

... IRF740 5 Revision history Table 7. Revision history Date 09-Sep-2004 03-Aug-2006 Revision Complete version,new datasheet according to 3 PCN DSG/CT/2C14. special marking: IRF740 @ 4 New template, no content change Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com IRF740 ...

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